50MT060ULSTAPBF IGBT Transistor

The 50MT060ULSTAPBF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 50MT060ULSTAPBF transistor as follows.

50MT060ULSTAPBF Transistor Specification

Transistor Code		50MT060ULSTAPBF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MTP
Collector Power Dissipation (Maximum)	Pc	445W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.69V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		602

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