FF225R17ME3 IGBT Transistor

The FF225R17ME3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FF225R17ME3 transistor as follows.

FF225R17ME3 Transistor Specification

Transistor Code		FF225R17ME3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	1400W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	225A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		60

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