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FD1000R17IE4 IGBT Transistor

The FD1000R17IE4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FD1000R17IE4 transistor as follows.

Circuit diagram symbol of the FD1000R17IE4 transistor

FD1000R17IE4 Transistor Specification

Transistor Code FD1000R17IE4
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 6250W
Collector-Emitter Voltage (Maximum) VCE 1700V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 1000A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 100

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