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IGC193T120T8RM IGBT Transistor

The IGC193T120T8RM is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC193T120T8RM transistor as follows.

Circuit diagram symbol of the IGC193T120T8RM transistor

IGC193T120T8RM Transistor Specification

Transistor Code IGC193T120T8RM
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package CHIP
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.3V
Collector Current (Maximum) IC 200A
Operating Junction Temperature (Maximum) 175 oC

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