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IXGK35N120CD1 IGBT Transistor

The IXGK35N120CD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGK35N120CD1 transistor as follows.

Circuit diagram symbol of the IXGK35N120CD1 transistor

IXGK35N120CD1 Transistor Specification

Transistor Code IXGK35N120CD1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO264
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 3.3V
Collector Current (Maximum) IC 70A
Rise Time 160

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