CT60AM-18F IGBT Transistor

The CT60AM-18F is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the CT60AM-18F transistor as follows.

CT60AM-18F Transistor Specification

Transistor Code		CT60AM-18F
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PL
Collector Power Dissipation (Maximum)	Pc	180W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		4400pF
Rise Time		50

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