TIG056BF-1E IGBT Transistor

The TIG056BF-1E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the TIG056BF-1E transistor as follows.

TIG056BF-1E Transistor Specification

Transistor Code		TIG056BF-1E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220F
Collector Power Dissipation (Maximum)	Pc	30W
Collector-Emitter Voltage (Maximum)	VCE	430V
Gate-Emitter Voltage (Maximum)	VGE	33V
Collector-Emitter Saturation Voltage	VCE(on)	3.6V
Collector Current (Maximum)	IC	240A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		100
Rise Time		32

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