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IRGB20B60PD1 IGBT Transistor

The IRGB20B60PD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGB20B60PD1 transistor as follows.

Circuit diagram symbol of the IRGB20B60PD1 transistor

IRGB20B60PD1 Transistor Specification

Transistor Code IRGB20B60PD1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220AB
Collector Power Dissipation (Maximum) Pc 215W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.35V
Collector Current (Maximum) IC 40A

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