RJP30H1DPD IGBT Transistor

The RJP30H1DPD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP30H1DPD transistor as follows.

RJP30H1DPD Transistor Specification

Transistor Code		RJP30H1DPD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252
Collector-Emitter Voltage (Maximum)	VCE	360V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	30A
Rise Time		150

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