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STGB3NB60HD IGBT Transistor

The STGB3NB60HD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB3NB60HD transistor as follows.

Circuit diagram symbol of the STGB3NB60HD transistor

STGB3NB60HD Transistor Specification

Transistor Code STGB3NB60HD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package D2PAK
Collector Power Dissipation (Maximum) Pc 70W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.8V
Collector Current (Maximum) IC 6A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 235pF
Rise Time 16

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