APT40GP90JDQ2 IGBT Transistor

The APT40GP90JDQ2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT40GP90JDQ2 transistor as follows.

APT40GP90JDQ2 Transistor Specification

Transistor Code		APT40GP90JDQ2
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	284W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	27A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		325
Rise Time		23

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