GM400HB06CT IGBT Transistor

The GM400HB06CT is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GM400HB06CT transistor as follows.

GM400HB06CT Transistor Specification

Transistor Code		GM400HB06CT
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	500A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1540000pF
Rise Time		25

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