STGB7NB60HD IGBT Transistor

The STGB7NB60HD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB7NB60HD transistor as follows.

STGB7NB60HD Transistor Specification

Transistor Code		STGB7NB60HD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK
Collector Power Dissipation (Maximum)	Pc	80W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	14A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		390pF
Rise Time		15

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