AP40G120W IGBT Transistor

The AP40G120W is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the AP40G120W transistor as follows.

AP40G120W Transistor Specification

Transistor Code		AP40G120W
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	208W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.4V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		205
Rise Time		30

UXPython is not the creator or an official representative of the AP40G120W IGBT transistor. You can download the official AP40G120W IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IXGT64N60B3 IGBT Transistor MGW20N120 IGBT Transistor IXGH40N60C2 IGBT Transistor IKD04N60RF IGBT Transistor SKM100GAX173D IGBT Transistor F4-75R12KS4 IGBT Transistor HGT1S12N60C3S9A IGBT Transistor 1MBI200N-120 IGBT Transistor APT75GT120JRDQ3 IGBT Transistor IXGH10N60 IGBT Transistor APT50GF120LRG IGBT Transistor APTGT200U170D4 IGBT Transistor APT33GF120LRD IGBT Transistor IXGT32N90B2 IGBT Transistor IKW40N65WR5 IGBT Transistor IFS75B12N3E4_B31 IGBT Transistor IXGH25N160 IGBT Transistor MMG800K060U6EN IGBT Transistor HGT1S7N60C3DS9A IGBT Transistor RJH60M2DPP-M0 IGBT Transistor