APT75GT120JRDQ3 IGBT Transistor

The APT75GT120JRDQ3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT75GT120JRDQ3 transistor as follows.

APT75GT120JRDQ3 Transistor Specification

Transistor Code		APT75GT120JRDQ3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	480W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	3.7V
Collector Current (Maximum)	IC	97A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		720
Rise Time		65

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