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IKW40N65WR5 IGBT Transistor

The IKW40N65WR5 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IKW40N65WR5 transistor as follows.

Circuit diagram symbol of the IKW40N65WR5 transistor

IKW40N65WR5 Transistor Specification

Transistor Code IKW40N65WR5
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 230W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.4V
Collector Current (Maximum) IC 80A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 45
Rise Time 29

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