ZXMN2A01E6 MOSFET Transistor

The ZXMN2A01E6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMN2A01E6 transistor as follows.

ZXMN2A01E6 Transistor Specification

Transistor Code		ZXMN2A01E6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT26
Transistor SMD Code		2A1
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	1.7W
Drain-Source Capacitance		303pF

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