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AP3N028EY MOSFET Transistor

The AP3N028EY is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3N028EY transistor as follows.

Circuit diagram symbol of the AP3N028EY transistor

AP3N028EY Transistor Specification

Transistor Code AP3N028EY
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT26
Transistor SMD Code Z01SS
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.028Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 95pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 3V

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