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AP2532GY MOSFET Transistor

The AP2532GY is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2532GY transistor as follows.

Circuit diagram symbol of the AP2532GY transistor

AP2532GY Transistor Specification

Transistor Code AP2532GY
Transistor Type MOSFET
Control Channel Type NP-Channel
Package SOT26
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2.4(1.8)A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.13(0.25)Ohm
Power Dissipation (Maximum) PD 1.14W
Drain-Source Capacitance 70(63)pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10(9)nS

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