AP2615GEY MOSFET Transistor

The AP2615GEY is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2615GEY transistor as follows.

AP2615GEY Transistor Specification

Transistor Code		AP2615GEY
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT26
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.052Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4.5nS
Gate-Threshold Voltage (Maximum)		3V

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