STH9NA60FI MOSFET Transistor

The STH9NA60FI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH9NA60FI transistor as follows.

STH9NA60FI Transistor Specification

Transistor Code		STH9NA60FI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOWATT218
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	160W
Drain-Source Capacitance		230pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		32nS
Gate-Threshold Voltage (Maximum)		3.75V
Total Gate Charge		75nC

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