STH8NA60FI MOSFET Transistor

The STH8NA60FI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH8NA60FI transistor as follows.

STH8NA60FI Transistor Specification

Transistor Code		STH8NA60FI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOWATT218
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		1690pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		58nC

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