STH9NA80FI MOSFET Transistor

The STH9NA80FI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH9NA80FI transistor as follows.

STH9NA80FI Transistor Specification

Transistor Code		STH9NA80FI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOWATT218
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	80W
Drain-Source Capacitance		290pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		45nS
Gate-Threshold Voltage (Maximum)		3.75V
Total Gate Charge		115nC

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