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STH6N100FI MOSFET Transistor

The STH6N100FI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STH6N100FI transistor as follows.

Circuit diagram symbol of the STH6N100FI transistor

STH6N100FI Transistor Specification

Transistor Code STH6N100FI
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOWATT218
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 2Ohm
Power Dissipation (Maximum) PD 70W
Drain-Source Capacitance 2800pF
Operating Junction Temperature (Maximum) 150°C

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