FQB9P25TM MOSFET Transistor

The FQB9P25TM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB9P25TM transistor as follows.

FQB9P25TM Transistor Specification

Transistor Code		FQB9P25TM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.62Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		170pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		150nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		29nC

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