SSI4N60A MOSFET Transistor

The SSI4N60A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSI4N60A transistor as follows.

SSI4N60A Transistor Specification

Transistor Code		SSI4N60A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.5Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		545pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		25nC

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