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STB55NF06L-1 MOSFET Transistor

The STB55NF06L-1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB55NF06L-1 transistor as follows.

Circuit diagram symbol of the STB55NF06L-1 transistor

STB55NF06L-1 Transistor Specification

Transistor Code STB55NF06L-1
Transistor Type MOSFET
Control Channel Type N-Channel
Package I2PAK
Transistor SMD Code B55NF06L
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 16V
Drain Current (Maximum) ID 55A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.02Ohm
Power Dissipation (Maximum) PD 95W
Drain-Source Capacitance 300pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 100nS
Gate-Threshold Voltage (Maximum) 1.7V
Total Gate Charge 27nC

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