The STB55NF06L-1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the STB55NF06L-1 transistor as follows.
Transistor Code | STB55NF06L-1 | |
---|---|---|
Transistor Type | MOSFET | |
Control Channel Type | N-Channel | |
Package | I2PAK | |
Transistor SMD Code | B55NF06L | |
Drain-Source Voltage (Maximum) | VDS | 60V |
Gate-Source Voltage (Maximum) | VGS | 16V |
Drain Current (Maximum) | ID | 55A |
Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.02Ohm |
Power Dissipation (Maximum) | PD | 95W |
Drain-Source Capacitance | 300pF | |
Operating Junction Temperature (Maximum) | 175°C | |
Rise Time | 100nS | |
Gate-Threshold Voltage (Maximum) | 1.7V | |
Total Gate Charge | 27nC |
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