SSI2N80A MOSFET Transistor

The SSI2N80A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSI2N80A transistor as follows.

SSI2N80A Transistor Specification

Transistor Code		SSI2N80A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Drain-Source Voltage (Maximum)	VDS	800V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	6Ohm
Power Dissipation (Maximum)	PD	80W
Drain-Source Capacitance		425pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		22nC

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