free stats

Home » Electronics » FET » BUK9E15-60E Transistor

BUK9E15-60E MOSFET Transistor

The BUK9E15-60E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUK9E15-60E transistor as follows.

Circuit diagram symbol of the BUK9E15-60E transistor

BUK9E15-60E Transistor Specification

Transistor Code BUK9E15-60E
Transistor Type MOSFET
Control Channel Type N-Channel
Package I2PAK
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 54A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.013Ohm
Power Dissipation (Maximum) PD 96W
Drain-Source Capacitance 196pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 22.4nS
Gate-Threshold Voltage (Maximum) 2.1V
Total Gate Charge 20.5nC

BUK9E15-60E MOSFET Transistor Overview

The BUK9E15-60E is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a I2PAK package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the BUK9E15-60E MOSFET

Followings are the key electrical characteristics of the BUK9E15-60E MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in BUK9E15-60E MOSFET transistor is 60V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the BUK9E15-60E MOSFET transistor is 10V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the BUK9E15-60E MOSFET transistor is 54A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of BUK9E15-60E MOSFET transistor when the transistor is fully turned on is 0.013 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the BUK9E15-60E MOSFET transistor can comfortably transfer into heat without breaking is 96W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the BUK9E15-60E MOSFET transistor is 196pF. This value influences to the switching speed of the BUK9E15-60E MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the BUK9E15-60E MOSFET transistor is switched on is 22.4nS. This is the rate at which BUK9E15-60E MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the BUK9E15-60E MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of BUK9E15-60E MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

UXPython is not the creator or an official representative of the BUK9E15-60E MOSFET transistor. You can download the official BUK9E15-60E MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

BUK7E13-60E BUK7E13-60E MOSFET Transistor BUK7E1R6-30E BUK7E1R6-30E MOSFET Transistor BUK7E1R8-40E BUK7E1R8-40E MOSFET Transistor BUK7E1R9-40E BUK7E1R9-40E MOSFET Transistor BUK7E2R3-40E BUK7E2R3-40E MOSFET Transistor BUK7E2R6-60E BUK7E2R6-60E MOSFET Transistor BUK7E3R1-40E BUK7E3R1-40E MOSFET Transistor BUK7E3R5-60E BUK7E3R5-60E MOSFET Transistor BUK7E4R0-80E BUK7E4R0-80E MOSFET Transistor BUK7E4R6-60E BUK7E4R6-60E MOSFET Transistor BUK7E5R2-100E BUK7E5R2-100E MOSFET Transistor BUK7E8R3-40E BUK7E8R3-40E MOSFET Transistor BUK9E1R6-30E BUK9E1R6-30E MOSFET Transistor BUK9E1R9-40E BUK9E1R9-40E MOSFET Transistor BUK9E2R3-40E BUK9E2R3-40E MOSFET Transistor BUK9E2R8-60E BUK9E2R8-60E MOSFET Transistor BUK9E3R2-40E BUK9E3R2-40E MOSFET Transistor BUK9E3R7-60E BUK9E3R7-60E MOSFET Transistor BUK9E4R4-80E BUK9E4R4-80E MOSFET Transistor BUK9E4R9-60E BUK9E4R9-60E MOSFET Transistor