PD648BA MOSFET Transistor

The PD648BA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PD648BA transistor as follows.

PD648BA Transistor Specification

Transistor Code		PD648BA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	94A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0039Ohm
Power Dissipation (Maximum)	PD	62.5W
Drain-Source Capacitance		325pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS

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