IPD06N03LA MOSFET Transistor

The IPD06N03LA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD06N03LA transistor as follows.

IPD06N03LA Transistor Specification

Transistor Code		IPD06N03LA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Transistor SMD Code		06N03LA
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	83W
Drain-Source Capacitance		800pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		7.2nS
Gate-Threshold Voltage (Maximum)		2V

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