AP3N2R8H MOSFET Transistor

The AP3N2R8H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP3N2R8H transistor as follows.

AP3N2R8H Transistor Specification

Transistor Code		AP3N2R8H
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	158A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0028Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		1100pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		63nS
Gate-Threshold Voltage (Maximum)		3V

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