NDT6N60 MOSFET Transistor

The NDT6N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NDT6N60 transistor as follows.

NDT6N60 Transistor Specification

Transistor Code		NDT6N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.7Ohm
Power Dissipation (Maximum)	PD	85W
Drain-Source Capacitance		74pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS

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