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IXTY1N100P MOSFET Transistor

The IXTY1N100P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTY1N100P transistor as follows.

Circuit diagram symbol of the IXTY1N100P transistor

IXTY1N100P Transistor Specification

Transistor Code IXTY1N100P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 15Ohm
Power Dissipation (Maximum) PD 50W
Operating Junction Temperature (Maximum) 150°C
Rise Time 750nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 15.5nC

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