P1703BDG MOSFET Transistor

The P1703BDG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P1703BDG transistor as follows.

P1703BDG Transistor Specification

Transistor Code		P1703BDG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	42A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		208pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		21.8nS

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