FDD86113LZ MOSFET Transistor

The FDD86113LZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD86113LZ transistor as follows.

FDD86113LZ Transistor Specification

Transistor Code		FDD86113LZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.104Ohm
Power Dissipation (Maximum)	PD	29W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V

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