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IXFR80N50P MOSFET Transistor

The IXFR80N50P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFR80N50P transistor as follows.

Circuit diagram symbol of the IXFR80N50P transistor

IXFR80N50P Transistor Specification

Transistor Code IXFR80N50P
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOPLUS247
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 45A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.072Ohm
Power Dissipation (Maximum) PD 360W
Operating Junction Temperature (Maximum) 150°C
Rise Time 200nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 197nC

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