IXZR08N120B MOSFET Transistor

The IXZR08N120B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXZR08N120B transistor as follows.

IXZR08N120B Transistor Specification

Transistor Code		IXZR08N120B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS247
Drain-Source Voltage (Maximum)	VDS	1200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		86pF
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4.9V

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