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IXFR26N120P MOSFET Transistor

The IXFR26N120P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFR26N120P transistor as follows.

Circuit diagram symbol of the IXFR26N120P transistor

IXFR26N120P Transistor Specification

Transistor Code IXFR26N120P
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOPLUS247
Drain-Source Voltage (Maximum) VDS 1200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 15A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.5Ohm
Power Dissipation (Maximum) PD 320W
Operating Junction Temperature (Maximum) 150°C
Rise Time 300nS
Gate-Threshold Voltage (Maximum) 6.5V
Total Gate Charge 225nC

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