IXZR18N50B MOSFET Transistor

The IXZR18N50B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXZR18N50B transistor as follows.

IXZR18N50B Transistor Specification

Transistor Code		IXZR18N50B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUS247
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.37Ohm
Power Dissipation (Maximum)	PD	350W
Drain-Source Capacitance		172pF
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4.6V

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