FQB4N90TM MOSFET Transistor

The FQB4N90TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB4N90TM transistor as follows.

FQB4N90TM Transistor Specification

Transistor Code		FQB4N90TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.3Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		70nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		24nC

UXPython is not the creator or an official representative of the FQB4N90TM MOSFET transistor. You can download the official FQB4N90TM MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

HFW640 MOSFET Transistor FQB4N25TM MOSFET Transistor FQB2N80TM MOSFET Transistor PSMN005-55B MOSFET Transistor FQB34P10TM MOSFET Transistor FQB5N90TM MOSFET Transistor FQB13N10LTM MOSFET Transistor FCB290N80 MOSFET Transistor FQB17P10TM MOSFET Transistor FQB50N06TM MOSFET Transistor FQB30N06TM MOSFET Transistor FQB1P50TM MOSFET Transistor FQB5N30TM MOSFET Transistor FQB4P40TM MOSFET Transistor FCB110N65F MOSFET Transistor FDB52N20TM MOSFET Transistor FQB16N25TM MOSFET Transistor FQB11P06TM MOSFET Transistor FQB32N20CTM MOSFET Transistor FQB2P40TM MOSFET Transistor