FQP65N06 MOSFET Transistor

The FQP65N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQP65N06 transistor as follows.

FQP65N06 Transistor Specification

Transistor Code		FQP65N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	65A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	150W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		48nC

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