AP16N50P MOSFET Transistor

The AP16N50P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP16N50P transistor as follows.

AP16N50P Transistor Specification

Transistor Code		AP16N50P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.4Ohm
Power Dissipation (Maximum)	PD	173.6W
Drain-Source Capacitance		630pF
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		4V

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