FDP8896 MOSFET Transistor

The FDP8896 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP8896 transistor as follows.

FDP8896 Transistor Specification

Transistor Code		FDP8896
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	92A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0059Ohm
Power Dissipation (Maximum)	PD	80W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		48nC

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