IPP60R199CP MOSFET Transistor

The IPP60R199CP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP60R199CP transistor as follows.

IPP60R199CP Transistor Specification

Transistor Code		IPP60R199CP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.199Ohm
Power Dissipation (Maximum)	PD	139W
Total Gate Charge		32nC

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