FQB6N15TM MOSFET Transistor

The FQB6N15TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB6N15TM transistor as follows.

FQB6N15TM Transistor Specification

Transistor Code		FQB6N15TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	6.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	63W
Drain-Source Capacitance		48pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		45nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		6.5nC

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