HFW50N06 MOSFET Transistor

The HFW50N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFW50N06 transistor as follows.

HFW50N06 Transistor Specification

Transistor Code		HFW50N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		600pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		105nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		40nC

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