HFW640 MOSFET Transistor

The HFW640 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFW640 transistor as follows.

HFW640 Transistor Specification

Transistor Code		HFW640
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	139W
Drain-Source Capacitance		175pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		150nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		37nC

UXPython is not the creator or an official representative of the HFW640 MOSFET transistor. You can download the official HFW640 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQB5N15TM MOSFET Transistor FQB17N08LTM MOSFET Transistor HFW8N65U MOSFET Transistor FQB12P20TM MOSFET Transistor FQB2N60TM MOSFET Transistor FQB11N40CTM MOSFET Transistor FQB55N10TM MOSFET Transistor FQB16N25TM MOSFET Transistor FQB11N40TM MOSFET Transistor FQB65N06TM MOSFET Transistor SMK1820D2 MOSFET Transistor FQB6N60CTM MOSFET Transistor FQB16N25CTM MOSFET Transistor FQB13N10LTM MOSFET Transistor FQB9N50CTM MOSFET Transistor FQB2P25TM MOSFET Transistor FQB630TM MOSFET Transistor FQB16N15TM MOSFET Transistor FQB70N10TM_AM002 MOSFET Transistor FQB2N90TM MOSFET Transistor