FQB30N06TM MOSFET Transistor

The FQB30N06TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB30N06TM transistor as follows.

FQB30N06TM Transistor Specification

Transistor Code		FQB30N06TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	79W
Drain-Source Capacitance		270pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		85nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		19nC

UXPython is not the creator or an official representative of the FQB30N06TM MOSFET transistor. You can download the official FQB30N06TM MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQB30N06LTM MOSFET Transistor FQB19N20LTM MOSFET Transistor FQB6N25TM MOSFET Transistor HFW8N65U MOSFET Transistor FQB5N60CTM MOSFET Transistor FQB3P50TM MOSFET Transistor FQB12N50TM_AM002 MOSFET Transistor FQB4P25TM MOSFET Transistor FQB16N25CTM MOSFET Transistor FQB16N25TM MOSFET Transistor FQB16N15TM MOSFET Transistor FQB9N08LTM MOSFET Transistor FQB5N50TM MOSFET Transistor FQB7N20LTM MOSFET Transistor FQB630TM MOSFET Transistor FQB15P12TM MOSFET Transistor SMK0825D2 MOSFET Transistor SMK1060D2 MOSFET Transistor FQB9N25TM MOSFET Transistor HFW10N60S MOSFET Transistor