free stats

PSMN004-36B MOSFET Transistor

The PSMN004-36B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PSMN004-36B transistor as follows.

Circuit diagram symbol of the PSMN004-36B transistor

PSMN004-36B Transistor Specification

Transistor Code PSMN004-36B
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2-PAK
Drain-Source Voltage (Maximum) VDS 36V
Gate-Source Voltage (Maximum) VGS 15V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.005Ohm
Power Dissipation (Maximum) PD 230W
Drain-Source Capacitance 1700pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 220nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 97nC

UXPython is not the creator or an official representative of the PSMN004-36B MOSFET transistor. You can download the official PSMN004-36B MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQB13N06LTM FQB13N06LTM MOSFET Transistor FQB5N40TM FQB5N40TM MOSFET Transistor FQB9N25CTM FQB9N25CTM MOSFET Transistor FQB5P10TM FQB5P10TM MOSFET Transistor FQB2P40TM FQB2P40TM MOSFET Transistor FQB13N10LTM FQB13N10LTM MOSFET Transistor FQB47P06TM_AM002 FQB47P06TM_AM002 MOSFET Transistor FQB8P10TM FQB8P10TM MOSFET Transistor FQB19N20CTM FQB19N20CTM MOSFET Transistor FQB2N60TM FQB2N60TM MOSFET Transistor FQB2N50TM FQB2N50TM MOSFET Transistor FQB2N30TM FQB2N30TM MOSFET Transistor FQB5N90TM FQB5N90TM MOSFET Transistor FQB5N20TM FQB5N20TM MOSFET Transistor FQB19N10TM FQB19N10TM MOSFET Transistor FQB17N08TM FQB17N08TM MOSFET Transistor FQB9N50TM FQB9N50TM MOSFET Transistor FQB2N80TM FQB2N80TM MOSFET Transistor FQB14N30TM FQB14N30TM MOSFET Transistor FQB2P25TM FQB2P25TM MOSFET Transistor